2SK4196LS
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 5.5A TO-220FI
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 21A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 5.5A
Turn-Off Delay Time 39 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Rise Time 32ns
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 30V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 1.56 Ω @ 2.8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13 ns
Case Connection ISOLATED
Power Dissipation 30W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 30W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2008
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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