2SK4171
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 100A TO220-3
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Technical Details
Supply Chain
Lifecycle Status LIFETIME (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.75W Ta 75W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.75W
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 380ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 370 ns
Turn-Off Delay Time 500 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0105Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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