Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 170W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 720m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 45.4nC @ 10V
Drain to Source Voltage (Vdss) 650V
Avalanche Energy Rating (Eas) 132 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 48A
Drain-source On Resistance-Max 0.72Ohm
Drain Current-Max (Abs) (ID) 15A
Drive Voltage (Max Rds On,Min Rds On) 10V