2SK4099LS
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Bulk Through Hole N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 6.9A Tc 8.5A 2W 37ns
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Buying Options
Total Price: USD $3.18
Unit Price: USD $3.180784
≥1 USD $3.180784
≥10 USD $3.000739
≥100 USD $2.830883
≥500 USD $2.670645
≥1000 USD $2.519481
Inventory: 1188
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 940m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 30V
Current - Continuous Drain (Id) @ 25°C 6.9A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 37ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 8.5A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.94Ohm
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 215 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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