Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 26.5 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 430m Ω @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 46.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 146 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 159 mJ