Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 430m Ω @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 46.6nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 11A
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 141 mJ