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2SK3821-E

ON Semiconductor
RoHS
/
Package TO-220-3, Short Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Bulk Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 40A Ta 40A 1.65W Ta 65W Tc 110ns
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Buying Options
Total Price: USD $3.99
Unit Price: USD $3.985687
≥1 USD $3.985687
≥10 USD $3.760079
≥100 USD $3.547244
≥500 USD $3.346457
≥1000 USD $3.157036
Inventory: 1200
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.65W Ta 65W Tc
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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