Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.65W Ta 65W Tc
Rds On (Max) @ Id, Vgs 33m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V