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2SK3820-DL-E

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 26A SMP-FD
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 26A
Turn-Off Delay Time 185 ns
Fall Time (Typ) 62 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 34ns
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Current - Continuous Drain (Id) @ 25°C 26A Ta
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V
Rds On (Max) @ Id, Vgs 60m Ω @ 13A, 10V
FET Type N-Channel
Turn On Delay Time 20 ns
Power Dissipation 50W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.65W Ta 50W Tc
Configuration Single
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Bismuth (Sn/Bi)
Resistance 60mOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e6
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ

Physical

Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount, Through Hole

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