Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 160 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Input Capacitance (Ciss) (Max) @ Vds 1780pF @ 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Rds On (Max) @ Id, Vgs 26m Ω @ 20A, 10V
Turn On Delay Time 16.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.65W Ta 50W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ