2SK3748
RoHS
/
Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET HIGH-VOLTAGE POWER MOSFET
PDF
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Buying Options
Total Price: USD $1.05
Unit Price: USD $1.0507
≥1 USD $1.0507
≥10 USD $0.8626
≥100 USD $0.836
≥500 USD $0.80845
≥1000 USD $0.78185
Inventory: 1186
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Pulsed Drain Current-Max (IDM) 8A
Drain to Source Breakdown Voltage 1.5kV
Drain-source On Resistance-Max 7Ohm
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 360 ns
Fall Time (Typ) 116 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1500V
Rise Time 75ns
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 30V
Rds On (Max) @ Id, Vgs 7 Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 17 ns
Case Connection ISOLATED
Power Dissipation 3W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta 65W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Technology MOSFET (Metal Oxide)
Additional Feature HIGH RELIABILITY
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2005
Packaging Tray
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Alternative Model
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