2SK3746-1E
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1500V 2A
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Buying Options
Total Price: USD $4.85
Unit Price: USD $4.8488
≥1 USD $4.8488
≥10 USD $3.9786
≥100 USD $3.85415
≥500 USD $3.7297
≥1000 USD $3.6062
Inventory: 1106
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 2.5W Ta 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 10V
Rise Time 37 ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 59 ns
Turn-Off Delay Time 152 ns
Continuous Drain Current (ID) 2A
JEDEC-95 Code TO-247
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 1.5kV
Pulsed Drain Current-Max (IDM) 4A
Dimensions
Height 16.67mm
Length 15.6mm
Width 4.8mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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