FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 427 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 148A
Drain-source On Resistance-Max 0.032Ohm
Drain Current-Max (Abs) (ID) 37A
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)