Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 185 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V
Rds On (Max) @ Id, Vgs 60m Ω @ 10A, 10V
Turn On Delay Time 19.5 ns
Element Configuration Single
Power Dissipation-Max 2W Ta 25W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ