Pulsed Drain Current-Max (IDM) 180A
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 45A
Turn-Off Delay Time 265 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 20V
Rds On (Max) @ Id, Vgs 14m Ω @ 23A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta 30W Tc
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ