2SJ656
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 18A TO-220ML
PDF
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Buying Options
Total Price: USD $16.12
Unit Price: USD $16.11675
≥1 USD $16.11675
≥10 USD $13.224
≥100 USD $12.81075
≥500 USD $12.3975
≥1000 USD $11.98425
Inventory: 1258
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2004
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 2W Ta 30W Tc
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 2W
Case Connection ISOLATED
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75.5m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 125 ns
Turn-Off Delay Time 340 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.104Ohm
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 72A
Dual Supply Voltage 100V
Nominal Vgs 2.6 V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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