2N7008
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 150MA TO-92
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2003
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 150mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 400mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) 40V
Continuous Drain Current (ID) 150mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.15A
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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