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2N7002ET3G

ON Semiconductor
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET SMALL SIGNAL MOSFET 60V 310mA SINGL CH
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 1.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 26.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C 260mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V
Rise Time 1.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.2 ns
Turn-Off Delay Time 4.8 ns
Continuous Drain Current (ID) 310mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Drain to Source Breakdown Voltage 60V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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