Drain to Source Resistance 1.2Ohm
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 115mA
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 115mA Ta
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Element Configuration Single
Power Dissipation-Max 200mW Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ