Drain to Source Breakdown Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 170mA
Turn-Off Delay Time 200 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 20V
Vgs(th) (Max) @ Id 2.6V @ 100μA
Rds On (Max) @ Id, Vgs 18 Ω @ 80mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Technology MOSFET (Metal Oxide)
Max Power Dissipation 600mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ