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Package TO-267AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 500V 12A 3-Pin SMD-0.5
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-267AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/592
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 3
Reference Standard MIL-19500
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 515m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-276AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.515Ohm
DS Breakdown Voltage-Min 500V

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

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