JAN2N6849
RoHS
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Package TO-205AF Metal Can
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.5A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 320m Ω @ 6.5A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Power Dissipation 800mW
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 800mW Ta 25W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Qualified
Terminal Form WIRE
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series Military, MIL-PRF-19500/564
Published 1997
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-205AF Metal Can
Mounting Type Through Hole
Mount Through Hole
Contact Plating Lead, Tin
Alternative Model
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