APTM10UM01FAG
RoHS 
RoHS compliant
RoHS compliantPackage SP6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 860A SP6
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Buying Options
Total Price: USD $199.64
Unit Price: USD $199.63775
≥1 USD $199.63775
≥10 USD $178.9857
Inventory: 404
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 36 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5kW
Case Connection ISOLATED
Turn On Delay Time 185 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 275A, 10V
Vgs(th) (Max) @ Id 4V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds 60000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 860A Tc
Gate Charge (Qg) (Max) @ Vgs 2100nC @ 10V
Rise Time 270 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 175 ns
Turn-Off Delay Time 600 ns
Continuous Drain Current (ID) 860A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 2200A
Avalanche Energy Rating (Eas) 3000 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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