APT9M100B
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 9A TO-247
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 9A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 335W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 335W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2605pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 9A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 37A
Avalanche Energy Rating (Eas) 575 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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