DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 92A
Drain-source On Resistance-Max 0.25Ohm
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 250m Ω @ 11.5A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 310W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ