Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish PURE MATTE TIN
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 300W
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.2Ohm