Avalanche Energy Rating (Eas) 780 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 115A
Drain-source On Resistance-Max 0.15Ohm
Continuous Drain Current (ID) 37A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Input Capacitance (Ciss) (Max) @ Vds 5710pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 150m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 520W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish PURE MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ