APT29F100B2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3 Variant
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 30A T-MAX
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Buying Options
Total Price: USD $16.7
Unit Price: USD $16.7024
≥1 USD $16.7024
≥10 USD $13.563
Inventory: 144
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Drain-source On Resistance-Max 0.44Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 30A
Turn-Off Delay Time 130 ns
Fall Time (Typ) 33 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 35 ns
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 8500pF @ 25V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Rds On (Max) @ Id, Vgs 440m Ω @ 16A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 39 ns
Case Connection DRAIN
Power Dissipation 1.04kW
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1040W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Current Rating 29A
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 1kV
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish TIN SILVER COPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series POWER MOS 8?
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3 Variant
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 22 Weeks
Alternative Model
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