APT23F60B
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 23A TO-247
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Buying Options
Total Price: USD $17.73
Unit Price: USD $17.73365
≥1 USD $17.73365
≥10 USD $14.55115
≥100 USD $14.0961
≥500 USD $13.64105
≥1000 USD $13.18695
Inventory: 8401
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 23A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 415W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 415W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4415pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 24A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.29Ohm
Pulsed Drain Current-Max (IDM) 80A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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