APT18M80B
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 19A TO-247
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Buying Options
Total Price: USD $22.02
Unit Price: USD $22.0191
≥1 USD $22.0191
≥10 USD $18.0671
≥100 USD $17.5028
≥500 USD $16.9385
≥1000 USD $16.37325
Inventory: 7804
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 18A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 530m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3760pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 31 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.53Ohm
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 795 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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