APT18F60B
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 18A TO-247
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 495 mJ
Pulsed Drain Current-Max (IDM) 65A
Drain-source On Resistance-Max 0.37Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 23ns
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 390m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection DRAIN
Power Dissipation 335W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 335W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Current Rating 18A
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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