DS Breakdown Voltage-Min 400V
Drain-source On Resistance-Max 0.415Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 400V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 315m Ω @ 9A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 4W Ta 150W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ