2N6760
RoHS
/
Package TO-204AA, TO-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 400V TO-3
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Technical Details
Technical
DS Breakdown Voltage-Min 400V
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.22 Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 22A
Compliance
RoHS Status Non-RoHS Compliant
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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