Pulsed Drain Current-Max (IDM) 4A
Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.6Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.1A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.1A Tj
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 10mA
Rds On (Max) @ Id, Vgs 600m Ω @ 1.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature FAST SWITCHING
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ