VP3203N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 30V 0.65A 3-Pin TO-92
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Buying Options
Total Price: USD $1.63
Unit Price: USD $1.628
≥1 USD $1.628
≥10 USD $1.3552
≥100 USD $1.2232
Inventory: 1164
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55┬?C~150┬?C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature HIGH INPUT IMPEDANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 740mW
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m ╬? @ 3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25┬?C 650mA Tj
Rise Time 15 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ┬?20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 650mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.65A
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage -30V
Feedback Cap-Max (Crss) 60 pF
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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