Feedback Cap-Max (Crss) 20 pF
Drain to Source Breakdown Voltage -500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 100mA Tj
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Rds On (Max) @ Id, Vgs 30 Ω @ 100mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 740mW Ta
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ