VP2206N2
RoHS
/
Package TO-205AD, TO-39-3 Metal Can
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 750MA 3TO-39
PDF
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Buying Options
Total Price: USD $15.54
Unit Price: USD $15.5408
≥1 USD $15.5408
≥10 USD $14.2472
≥100 USD $12.900888
Inventory: 979
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Dimensions
Width 9.4mm
Length 9.4mm
Height 6.6mm
Technical
Feedback Cap-Max (Crss) 40 pF
Drain to Source Breakdown Voltage -60V
Drain-source On Resistance-Max 0.9Ohm
Drain Current-Max (Abs) (ID) 0.75A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 750mA
Turn-Off Delay Time 16 ns
Fall Time (Typ) 22 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 16 ns
Current - Continuous Drain (Id) @ 25°C 750mA Tj
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 10mA
Rds On (Max) @ Id, Vgs 900m Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 4 ns
Case Connection DRAIN
Power Dissipation 6W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360mW Tc
Number of Channels 1
Number of Elements 1
Terminal Form WIRE
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature HIGH INPUT IMPEDANCE
Terminal Finish NICKEL GOLD
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e4
Published 1998
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-205AD, TO-39-3 Metal Can
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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