VP2106N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH Si 60V 0.25A 3-Pin TO-92
PDF
/
Buying Options
Total Price: USD $0.56
Unit Price: USD $0.5632
≥1 USD $0.5632
≥10 USD $0.4752
≥100 USD $0.4312
Inventory: 493
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 740mW
Turn On Delay Time 4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250mA Tj
Rise Time 5 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 5 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage -60V
Feedback Cap-Max (Crss) 8 pF
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
VP2106N3-G+price,VP2106N3-G+datasheet,VP2106N3-G+in stock,buy+VP2106N3-G,finder+VP2106N3-G,VP2106N3-G+tutorials,VP2106N3-G+download