VN2460N3-G-P003
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT-MODE,600V,20 Ohm3 TO-92T/R
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Buying Options
Total Price: USD $1.14
Unit Price: USD $1.136971
≥1 USD $1.136971
≥200 USD $0.439822
≥500 USD $0.42538
≥1000 USD $0.417502
Inventory: 1133
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160mA Tj
Rise Time 10ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 160mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 25Ohm
DS Breakdown Voltage-Min 600V
Feedback Cap-Max (Crss) 25 pF
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
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