Feedback Cap-Max (Crss) 25 pF
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 25Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 160mA
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25°C 160mA Tj
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Vgs(th) (Max) @ Id 4V @ 2mA
Rds On (Max) @ Id, Vgs 20 Ω @ 100mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ