VN2450N8-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Mosfet; N-channel Enhancement-mode; 500V; 13 OHM3 SOT-89T/R
PDF
/
Buying Options
Total Price: USD $1.32
Unit Price: USD $1.32
≥1 USD $1.32
≥10 USD $1.1
≥100 USD $0.9944
Inventory: 1255
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 52.786812mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250mA Tj
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 0.75A
Dimensions
Height 1.6mm
Length 4.6mm
Width 2.6mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
VN2450N8-G+price,VN2450N8-G+datasheet,VN2450N8-G+in stock,buy+VN2450N8-G,finder+VN2450N8-G,VN2450N8-G+tutorials,VN2450N8-G+download