Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25°C 200mA Tj
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 13 Ω @ 400mA, 10V
Element Configuration Single
Power Dissipation-Max 1W Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ