VN2106N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT-MODE,60V,4.0 Ohm3 TO-92BAG
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Buying Options
Total Price: USD $0.44
Unit Price: USD $0.44
≥1 USD $0.44
≥10 USD $0.3696
≥100 USD $0.3256
Inventory: 1177
Minimum: 1
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Technical Details
Technical
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tj
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Rds On (Max) @ Id, Vgs 4 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 3 ns
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Tc
Number of Channels 1
Number of Elements 1
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2001
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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