VN10KN3-G-P013
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT-MODE,60V,5.0 Ohm3 TO-92AMMO
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Buying Options
Total Price: USD $0.63
Unit Price: USD $0.634116
≥1 USD $0.634116
≥10 USD $0.598224
≥100 USD $0.564356
≥500 USD $0.532411
≥1000 USD $0.502281
Inventory: 1250
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.19mm
Length 5.21mm
Height 5.33mm
Technical
Feedback Cap-Max (Crss) 5 pF
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 5Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 310mA
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Current - Continuous Drain (Id) @ 25°C 310mA Tj
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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