VN0606L-G-P003
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH Enhancmnt Mode MOSFET
PDF
/
Buying Options
Total Price: USD $1.14
Unit Price: USD $1.136971
≥1 USD $1.136971
≥200 USD $0.439822
≥500 USD $0.42538
≥1000 USD $0.417502
Inventory: 1136
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Feedback Cap-Max (Crss) 5 pF
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 3Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 330mA
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 330mA Tj
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 3 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
Recommended For You
VN0606L-G-P003+price,VN0606L-G-P003+datasheet,VN0606L-G-P003+in stock,buy+VN0606L-G-P003,finder+VN0606L-G-P003,VN0606L-G-P003+tutorials,VN0606L-G-P003+download