VN0300L-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Transistor: N-MOSFET; unipolar; 30V; 1W; TO92; 1A
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Buying Options
Total Price: USD $1.26
Unit Price: USD $1.2584
≥1 USD $1.2584
≥10 USD $1.0296
≥100 USD $0.9592
Inventory: 1161
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.19mm
Length 5.21mm
Height 5.33mm
Technical
Feedback Cap-Max (Crss) 50 pF
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 0.64A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 640mA
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Current - Continuous Drain (Id) @ 25°C 640mA Tj
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Tc
Number of Channels 1
Number of Elements 1
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Additional Feature LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Published 2013
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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