VN0109N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET MOSFET N-CHANNEL ENHANCE-MODE 90V
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Buying Options
Total Price: USD $0.79
Unit Price: USD $0.792
≥1 USD $0.792
≥10 USD $0.6688
≥100 USD $0.6072
Inventory: 1126
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 65pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Tj
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 90V
Feedback Cap-Max (Crss) 8 pF
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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