TP5335K1-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Mosfet, P-channel Enhancement-mode, -350V, 30 Ohm 3 SOT-23 1.3MM T/r
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Buying Options
Total Price: USD $0.7
Unit Price: USD $0.70067
≥1 USD $0.70067
≥10 USD $0.66101
≥100 USD $0.6236
≥500 USD $0.5883
≥1000 USD $0.555
Inventory: 27699
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 85mA Tj
Rise Time 15 ns
Drain to Source Voltage (Vdss) 350V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) -85mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.085A
Drain to Source Breakdown Voltage -350V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 22 pF
Dimensions
Height 1.12mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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