TP5322N8-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,P-CHANNEL ENHANCEMENT-MODE,-220V,12 Ohm3 SOT-89T/R
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Buying Options
Total Price: USD $2.18
Unit Price: USD $2.1755
≥1 USD $2.1755
≥10 USD $1.78505
≥100 USD $1.729
≥500 USD $1.67295
≥1000 USD $1.61785
Inventory: 30841
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 12Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 260mA Tj
Rise Time 15 ns
Drain to Source Voltage (Vdss) 220V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) -260mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Drain to Source Breakdown Voltage -220V
Pulsed Drain Current-Max (IDM) 0.9A
Dimensions
Height 1.6mm
Length 4.6mm
Width 2.6mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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