TP2640N3-G
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 400V 0.18A TO92-3
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Buying Options
Total Price: USD $4.17
Unit Price: USD $4.17169
≥1 USD $4.17169
≥10 USD $4.08012
≥100 USD $3.825031
≥500 USD $3.61855
≥1000 USD $3.49885
Inventory: 15
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 219.992299mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Tj
Rise Time 15ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -400V
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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