TP2640LG-G
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GLOVE, POLYAMIDE, L/FREE, PU, SIZE 6 - More Details
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Buying Options
Total Price: USD $2.19
Unit Price: USD $2.1912
≥1 USD $2.1912
≥10 USD $1.8216
≥100 USD $1.6632
Inventory: 362
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 740mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 86mA Tj
Rise Time 15 ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) -210mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -400V
Dimensions
Height 1.65mm
Length 4.9mm
Width 3.9mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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